基本介紹
- 中文名：金運姜
- 畢業院校：新加坡南洋理工大學
- 學位/學歷：博士
- 職業：教師
- 職稱：副教授
人物經歷,研究方向,學術成果,科研項目,代表性論著,發明專利,
人物經歷
2017.12—至今 中山大學電子與信息工程學院 副教授
2012—2017新加坡科技局材料工程研究所(A*star, IMRE) 研究員
2008—2012新加坡南洋理工大學 博士
2004—2007中國科學技術大學 碩士
研究方向
新型半導體材料和器件
納米光子學和納米電子學
低維(納米、二維)材料和器件
新功能材料製備及套用
學術成果
科研項目
1. TiO2表面處理可見光催化性能的提升及其在自 潔淨玻璃中的套用，新加坡材料工程研究所(IMRE)項目。
3. 大尺寸透明氧化導電薄膜的製備，新加坡國防部項目。
5. III-V/Si的合成及其在存儲器器上的套用，新加坡材料工程研究所項目。
代表性論著
1.1. H. F. Liu, Y. J. Jin, M. Lin, S. F. Guo, S. Tripathy and X. Z. Wang, Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures, J. Mater. Chem. C., 6 (2018) 13059. (Co-first author)
2. Y. J. Jin, J. J. Linghu, J. W. Chai, C. S. Chua, L. M. Wong, Y. P. Feng; M. Yang, S. J. Wang, Defect Evolution Enhanced Visible-Light Photocatalytic Activity in Nitrogen-Doped Anatase TiO2, The Journal of Physical Chemistry C, 2 (2018) 16600-16606.
3. H. F. Liu, J. J. Lee, Y. J. Jin, J. Yang, C. Y. Yang, D. Z. Chi,Huge Absorption Edge Blue shifts of Layered α-MoO3 Crystals upon Thickness Reduction Approaching 2D Nanosheets,The Journal of Physical Chemistry C,122 (2018) 12122–12130.
4. Y. J. Jin, D. H. Zhang, C. Ke, X. H. Tang, Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition, Journal of Alloys and Compounds, 756 (2018) 134-138.
5. H. F. Liu, Y. J. Jin, MOCVD Ge-on-GaAs and Its p-Type Doping via Incorporating Ga Atoms, Procedia Engineering, Procedia Engineering, 2017 215: 17–23. (Equal contribution)
6. Y. J. Jin*, X. H. Tang, H. F. Liu, C. Ke, D. H. Zhang*, “Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD”, Journal of Alloys and Compounds, 721 (2017) 628-632.
7. Y. J. Jin*, D. H. Zhang, H. F. Liu, X. H. Tang*, “Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD”, Materials Letters, 185 (2016) 77-80.
8. Y. J. Jin*, D. H. Zhang*, X. H. Tang, J. H. Teng, “InSbN alloys Grown on GaSb by Metal-organic chemical vapor deposition for long wavelength detection”, Thin Solid Films, 616 (2016) 624-627.
9. Y. J. Jin, C. K. Chia, L. M. Wong, H. F. Liu, J. W. Chai, D. Z. Chi and S. J. Wang*, “P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD”, Applied Surface Science, 376 (2016) 236-240.
10. Y. J. Jin*, Z. Xu, S. F. Yoon, C. K. Chia, S. J. Wang and D. Z. Chi, “Switching characteristics of TaOx-based One Diode-One Resistor for Crossbar Memory Application”, Electronic Material Letter, 12 (2016) 365-370.
11. Y. F. Lao, A. G. Unil Perera, H. L. Wang, J. H. Zhao, Y. J. Jin and D. H. Zhang, "Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors", J. Appl. Phys., 119 (2016) 105304.
12. H. F. Liu, Y. J. Jin, C. Y. Yang, “Droplets induced dot, dot-in-hole, and hole structures in GaGe thin films grown by MOCVD on GaAs substrates”, CrystEngComm, 18 (2016) 4499-4507. (Equal contribution).
13. H. F. Liu, Y. J. Jin, C. G. Li, S. B. Dolmanan, S. F. Guo, S. Tripathy, and C. C. Tan, “High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD”, RCS Advances, 6 (2016) 52725. (Equal contribution)
14. Y. J. Jin, X. H. Tang, J. H. Teng, D. H. Zhang, “Optical properties and bonding behaviors of InSbN alloys grown by metalorganic chemical vapor deposition”, Journal of Crystal Growth, 406 (2015) 12-16.
15. X. Z. Chen, Y. J. Jin, and D. H. Zhang, “Dilute antimonide nitride for long wavelength infrared photodetection”, AIP Conference Proceedings, 1598 (2014) 166.
16. C. K. Chia, A. Iskander, Y. B. Chen, Y. J. Jin, G. K. Dalapati, “Ge and GaAs integration for device applications”, Silicon-Germanium technology and device meeting (ISTDM), 87-88, 2014.
17. X.Z. Chen, D. H. Zhang, Y. J. Jin, J. H. Li, J. H. Teng, “Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys”, Journal of Crystal Growth, 362 (2013) 197–201.
18. Y. Wang, D. H. Zhang, X. Z. Chen, Y. J. Jin, “Bonding and diffusion of nitrogen in the InSbN alloys formed by two-step ion implantation”, Applied physcis letter, 101 (2012) 021905.
19. Y. J. Jin, D. H. Zhang, X. Z. Chen, X. H. Tang,“Sb antisite defects in InSb epilayers prepared by metal-organic chemical vapor deposition”, Journal of Crystal Growth, 318 (2011) 356-359.
20. Y. J. Jin, X. H. Tang, X. Z. Chen, D. H. Zhang, “Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition”, 2010 IEEE Photonics Global Conference, page 1-4, PGC (2010).
21. Y. J. Jin, Y. Wang, D. H. Zhang, X. H. Tang, B. L. Zhang, “Epitaxial growth of high quality InSb1-xNx by MOCVD”, 2008 IEEE Photonics Global @Singapore (IPGC), page1-4, PGC (2008).
22. Y. J. Jin, Q. X. Yu, S. J. Liu, Y. Liao, “Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film”, Chinese Journal of Quantum Electronics, 2008, 25(1): 43-48 (in Chinese)
發明專利
1. Y. J. Jin, J. W. Chai, Y. L. Hou, S. J. Wang, Increasing Solar Absorption for Photocatalysis by High dose N-doped TiO2”, Singapore IPOS 201655, Singapore.
