胡曉東，北京大學物理學院教授，博士生導師，先後畢業於北京大學、清華大學、電子科技大學。
基本介紹
- 中文名：胡曉東
- 職業：教授，博士生導師
- 畢業院校：北京大學、清華大學、電子科技大學
- 研究領域：光電子物理和器件研究
簡歷,研究領域,教學,目前承擔的科研項目,近期工作,
簡歷
1978.2 - 1982.1 北京大學物理系，獲學士學位
1989.8 獲清華大學碩士學位
1992.12 獲得電子科技大學物理學與光電子學博士學位
1993.1 - 1995.7 清華大學博士後流動站
1995.8 - 2005.8 北京大學物理系副教授
1998.7 - 2000.7 美國德克薩斯大學奧斯丁分校，Research Fellow
2000.7 - 2001.4 美國堪薩斯州立大學 Associate Researcher
2005.8 - 教授,，博士生導師，北京大學物理學院,，?>北京大學寬禁帶半導體研究中心
研究領域
光電子物理和器件研究。近期工作主要是GaN基短波長雷射器的研製和相應的物理研究。
教學
本科生《基礎物理》主講。
目前承擔的科研項目
主持國家863計畫課題《氮化鎵基短波長雷射器創新結構和關鍵技術》，2007.12-2010.11
主持國家自然科學基金項目《GaN基量子異質結構和發光性質》，2008.1-2010.12
參與國家重大科學研究計畫課題《受限半導體量子體系調控及光學、輸送性質研究》2006.09-2008.8
近期工作
Wei Yang and Xiaodong Hu，Comment on ‘‘Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films’’, 107, 159701 (2011) , Physical Review Letters
Lei Wang, Cimang Lu, Jianing Lu, Lei Liu, Ningyang Liu, Yujie Chen, Yanfeng Zhang, Erdan Gu, and Xiaodong Hu*, Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes，18 July 2011，Vol. 19, No. 15 / Optics Express 14182
Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Weihua Chen, ZheChuan Feng, Weimin Du and Xiaodong Hu*, Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures，Journal of Applied Physics, 109 073106 (2011)
Wang Yu-Zhou, Li Ding, Li Lei, Liu Ningyang, Liu Lei, Cao Wen-Yu, Chen Wei-Hua, and Xiaodong Hu*, Intersubband transitions in Al0.82In0.18N/GaN single quantum well,, Chin. Phys. B, Vol.20, No. 9 (2011) 094207
Lei Wang, Rui Li, Ding Li, Ningyang Liu, Lei Liu, Weihua Chen, Cunda Wang, Zhijian Yang, and Xiaodong Hu, Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer, Applied Physics Letters, 96(06)061110, 2010
Ziwen Yang, Rui Li, Tao Yu, Yanzhao Zhang, Weihua Chen, Xiaodong Hu*, Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field, Applied Physics Letters, 94(6), 061120 (2009)
Li, R; Zhang, JM; Chen, L; Zhao, HB; Yang, ZW; Yu, T; Li, D; Liu, ZC; Chen, WH; Yang, ZJ; Zhang, GY; Gan, ZZ; Hu, XD*; Wei, QY; Li, T; Ponce, FA, Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure, Applied Physics Letters, 94(21)211103, 2009
Lei Wang, Rui Li, Ziwen Yang, Ding Li, Tao Yu, Ningyang Liu, Lei Liu, Weihua Chen, and Xiaodong Hu*, High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes, APPLIED PHYSICS LETTERS 95 (21), 211104, 2009
D Zhang, Z C Liu and X D Hu* Improved Multi-layer Stopper in the GaN-based Laser Diode, Semicond. Sci. Technol. 24 (2009) 045003 (5pp)
W. H. Chen, X. D. Hu,X. D. Shan, X. N. Kang, X. R. Zhou, X. M. Zhang, T. J. Yu, K. Xu, Z. J. Yang, G. Y. Zhang , Shock-assisted superficial hexagonal-to-cubic phase transition in GaN/sapphire interface induced by ultra-violet laser lift-off, Chinese Physics Letters, Vol. 26, 016203 (2009)
GAO Ting-Ge, YI Jue-Min, ZHOU Zi-Yao, HU Xiao-Dong* First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride Chinese Physics Letters, 2008, Vol.25, No.8, 2989-2992
