任澤陽

任澤陽

任澤陽，男，1991年8月生，山東棗莊人，博士，西安電子科技大學微電子學院教師。

基本介紹

  • 中文名：任澤陽
  • 畢業院校：西安電子科技大學
  • 學位/學歷：博士
  • 職業：教師
  • 專業方向：金剛石材料生長及器件研究，金剛石-氮化鎵異質集成研究
  • 任職院校：西安電子科技大學
人物經歷,研究方向,學術成果,

人物經歷

於2014年獲得西安電子科技大學學士學位，同年保送為西安電子科技大學直博研究生，於2018年提前畢業獲得微電子學與固體電子學博士學位，並在西安電子科技大學繼續做博士後研究工作。

研究方向

1．金剛石材料生長及器件研究
2. 金剛石-氮化鎵異質集成研究

學術成果

目前研究團隊承擔的科研項目：
獲批2019年博士後創新人才支持計畫
主持重點實驗室基金2項。
第66批博士後科學基金面上項目。
參與預研項目、國家重點研發計畫，以及自然基金面上項目等多個項目的研究工作。
部分已發表學術論文：
  1. Zeyang Ren,Dandan Lv, Jiamin Xu, Jinfeng Zhang*, Jincheng Zhang*, Kai Su, Chunfu Zhangand Yue Hao.High Temperature (300℃) ALD Grown Al2O3 on Hydrogen Terminated Diamond: Band Offset and Electrical Properties of the MOSFETs[J].AppliedPhysicsLetters,2020, 116(1).
  2. Ze-Yang Ren, Jun Liu, Kai Su, Jin-Feng Zhang†, Jin-Cheng Zhang, Sheng-Rui Xu, and Yue Hao. Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface [J].Chin. Phys. B.Vol. 28, No. 12 (2019) .
  3. Zhicheng Su,†Zeyang Ren,Yitian Bao,Xiangzhou Lao,Jinfeng Zhang,Jincheng Zhang,Deliang Zhu,Youming Lu,Yue Haoand Shijie Xu. Luminescence landscapes of nitrogen-vacancy centers in diamond: quasi-localized vibrational resonances and selective coupling [J].J. Mater. Chem. C,2019, 7.
  4. Zeyang Ren,Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin and Yue Hao, High performance single crystalline diamond normally-off field effect transistors[J].IEEE Journal of the Electron Devices Society.2019, 7(1)
  5. 張金風; 徐佳敏;任澤陽*; 何琦; 許晟瑞; 張春福; 張進成; 郝躍。不同晶面的氫終端單晶金剛石場效應電晶體特性研究。物理學報，2020年第2期。
  6. Jin-Feng Zhang,* Wan-Jiao Chen,Ze-Yang Ren,*Kai Su, Peng-Zhi Yang, Zhuang-Zhuang Hu, Jin-Cheng Zhang, and Yue Hao.Characterization and mobility analysis of normally-off hydrogen-terminated diamond metal-oxide-semiconductor field effect transistors [J].PhysicaStatusSolidi(a).NOV 2019.
  7. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Shengrui Xu, Yao Li, and Yue Hao. Diamond Field Effect Transistors With MoO3Gate Dielectric [J].IEEE Electron Device Letters,2017, 38(6).
  8. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Pengzhi Yang,Yao Li, and Yue Hao. Polycrystalline Diamond MOSFET With MoO3Gate Dielectric and Passivation Layer [J].IEEE Electron Device Letters, 2017, 38(9).
  9. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Rudai Quan, Jiayin Yang, Zhiyu Lin, and Yue Hao. Polycrystalline diamond RF MOSFET with MoO3gate dielectric [J]. AIP Advances, 2017, 7(12).
  10. Zeyang Ren, Guansheng Yuan, Jinfeng Zhang, Lei Xu, Jincheng Zhang, Wanjiao Chen, and Yue Hao. Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures [J]. AIP Advances, 2018, 8(7).
  11. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Yao Li, and Yue Hao. Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition[J]. Chinese Physics Letters, 2018, 35(7).
  12. Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Rudai Quan, and Yue Hao. Characteristics of H-terminated single crystalline diamond field effect transistors[J]. Acta Physica Sinica. 2017, 66(20).
  13. Zeyang Ren,Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Pengzhi Yang, Dazheng Chen, Yao Li, and Yue Hao. Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 dielectric and gold gate metal[J]. Journal of Semiconductors, 2018, 39(7).
  14. Jinfeng Zhang,Zeyang Ren, Jincheng Zhang, Chunfu Zhang, Dazheng Chen, Shengrui Xu, Yao Li, and Yue Hao. Characterization and mobility analysis of MoO3-gated diamond MOSFET[J]. Japanese Journal of Applied Physics, 2018, 56, 100301 (2017).
  15. Jinfeng Zhang, Pengzhi Yang,Zeyang Ren, Jincheng Zhang, Shengrui Xu, Chunfu Zhang, Lei Xu and Yue Hao. Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor[J]. Acta Physica Sinica. 2018, 67(6): 068101.
  16. Yao Li, Jinfeng Zhang, Guipeng Liu,Zeyang Ren, Jincheng Zhang, and Yue Hao. Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond[J]. 2018, 12(3): 1700401.

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