陳佰樂

陳佰樂於2007年本科畢業中國科學技術大學近代物理系，後赴美國維吉尼亞大學深造。分別於2009年和2013年獲得物理學碩士學位和電子工程博士學位。隨後加入位於美國俄勒岡的Qrovo總部任射頻產品研發工程師，從事多種不同頻段的功率放大器和體聲波濾波器等無線通信元器件的研發和量產工作。

基本介紹

• 中文名：陳佰樂 
• 外文名：Baile Chen 
• 畢業院校：維吉尼亞大學 
• 代表作品：Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm 
• 主要成就：分別於2009年和2013年獲得物理學碩士學位和電子工程博士學位 
• 職稱：助理教授

研究方向

III-V族半導體材料和器件；短紅外和中紅外光電二極體和雷射二極體；高速，高功率光電二極體；寬禁帶半導體材料；矽光子器件

個人簡介

他於2016年1月全職加入上海科技大學信息科學與技術學院，任助理教授。

研究內容

陳佰樂博士的研究興趣包括：III-V族半導體材料和器件，短紅外和中紅外光電二極體和雷射二極體，高速/高功率光電二極體，寬禁帶半導體材料和矽光子器件。

代表論文

1.Baile Chen, A. L. Holmes Jr “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region” Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)

2.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” IEEE QUANTUM ELECTRONICS, VOL. 47, ISSUE 9, September, 2011, 1244-1250

3.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat. “Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 4, FEBRUARY 15, 2011, 218-220

4.Baile Chen, A. L. Holmes Jr “Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” J. Phys. D: Appl. Phys, Vol 46 (31), 315103, 2013

5.Baile Chen, Qiugui Zhou, Dion C.McIntosh, Jinrong Yuan, Yaojia Chen, Wenlu Sun, Joe C. Campbell, A. L. Holmes Jr. “Natural Lithography Nano-sphere Texturing as Antireflective Layer on InGaAs PIN Photodiodes” IEEE Electronics Letters, October 11, 2012, Volume 48, Issue 21, p.1340–1341

6.Baile Chen, W.Y. Jiang, A. L. Holmes Jr, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” Optical and Quantum Electronics, Volume 44, Issue 3 (2012), Page 103-109

7.Baile Chen, A. L. Holmes Jr, “Optical Gain Modeling of InP Based InGaAs(N)/GaAsSb Type-II Quantum Wells Laser for Mid-Infrared Emission” Optical and Quantum Electronics: Volume 45, Issue 2 (2013), Page 127-134

8.Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Dark Current Modeling of InP based SWIR and MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Optical and Quantum Electronics: Volume 45, Issue 3 (2013), Page 271-277

9.Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, Patrick Fay “Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode” Applied Physics Letters 101, 052107 (2012)

10.Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer reflector”, Electronics Letters Volume 48, Issue 19, p.1230–1232

11.Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP” Electronics Letters, September 29, 2011 Volume: 47 Issue:20, page(s): 1144 – 1145