1.G. Qin, H. Zhou, E. Rammaya, Z. Ma, and I. Knezevic, “Electron mobility in scaled silicon MOSFETs on off-axis substrates,” Applied Physics Letters, 2009, 94: 073504.
2.G. Qin, H.-C. Yuan, G.K. Celler, W. Zhou, and Z. Ma, “Flexible microwave PIN diodes and switches employing transferrable single-crystal Si nanomembranes on plastic substrates,” Journal of Physics D-Applied Physics, 2009, 42: 234006.
3.G. Qin, G. Wang, L.McCaughan, Z. Ma, “Superiority of common-base to common-emitter heterojunction bipolar transistors,” Applied Physics Letters, 2010, 97: 133506.
授權專利
High-Power Common-Base Amplifier Employing Current Source Output Bias, 美國國家專利授權號US7830208B2
申請(或公示)第一發明人專利6項。
獲獎情況
1.2011年 獲天津大學十佳傑出青年稱號
2.2008年 獲國際會議Silicon Monolithic Integrated Circuits in RF Systems Conference (Orlando, FL, USA)最佳論文獎