人物經歷
2007-09--2012-07 中國科學院半導體研究所 工學博士
2003-09--2007-07 山東大學 理學學士
2022-10~現在, 中國科學院半導體研究所, 研究員
2012-07~2022-10,中國科學院半導體研究所, 副研究員
科研成就
1、銻化物紅外探測材料分子束外延生長技術
2、銻化物高性能光電器件設計及工藝製造技術
1、重大項目,高性能組件技術,2022 -2025
2、高技術項目,高性能探測薄膜技術,2019 -2025
3、納米異質結材料與器件微結構表征及性能評估,2025 -2029
[1]. Xie, R., Y. Shan, Y. Liang, L. Yao, X. Su, D. Wu, H. Hao, D. Jiang, G. Wang, Y. Xu, H. Ni and Z. Niu (2025) "Extended Short-Wave Infrared Barrier Structure Focal Plane Array Based on InGaAs/GaAsSb Type-II Superlattices." Journal of Lightwave Technology 43, 5: 2271-2276
[2]. Shan, Y., Y. Zhang, L. Yao, R. Xie, Q. Pang, D. Wu, D. Jiang, G. Wang, H. Hao, Y. Xu, H. Ni and Z. Niu (2025) "High operating temperature mid-wavelength infrared InAsSb nBn detectors and focal plane array." Opt Express 33, 2: 2772-2782
[3]. Lv X, Xie H, Li C, Yang W, Bai Y, Wang G, et al.(2025), Insight into the mechanism of lattice damage in ground and polished InAs substrates. J Vac Sci Technol A 43(3): 033208.
[4]. Liang Y, Zhou W, Zhang X, Chang F, Li N, Shan Y, et al. (2024), InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer. Appl. Phys. Lett. 125(14): 141103.
[5]. Liang, Yan, Wenguang Zhou, Xiangbin Su, Nong Li, Faran Chang, Ruoyu Xie, Hongguang Yu, Janmei Shi, Chuanbo Li, Hongyue Hao, Chengao Yang, Guowei Wang, Dongwei Jiang, Donghai Wu, Zhichuan Niu, Youdou Zheng, Yingqiang Xu and Yi Shi (2024) InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors. Optics Express2024, 32(13): 23822-23830.