孫海定

孫海定

孫海定，男，iGaN Laboratory實驗室負責人，國家優青、省傑青，特任教授、博士生導師。

本科和碩士畢業於華中科技大學，博士畢業於美國波士頓大學。

主要研究方向為半導體材料與光電和電子器件，光電子集成晶片，光電化學及催化。

基本介紹

人物經歷,研究方向,主要成就,科研成果,榮譽表彰,社會任職,

人物經歷

2004年—2008年，華中科技大學，學士，電子科學與技術
2009年—2015年，美國波士頓大學，博士，電子工程。
2015年—2016年，墨西哥SolarEver太陽能波士頓分公司，首席科學家
2016年—2018年，沙特阿卜杜拉國王科技大學（KAUST），博士後兼Lab Manager。
2018年—2023年，中國科技大學微電子學院，特任研究員，博導
2024年—，中國科技大學微電子學院，特任教授，博導。

研究方向

長期致力於寬禁帶III族氮化物（GaN等）和III族氧化物等化合物半導體材料MOCVD和MBE外延、光電器件（LED, laser, photodetector等）和電力電子功率器件（高電子遷移率電晶體HEMTs）設計與製備研究。同時開展包括低維材料與器件（納米線，量子點），二維/三維新型半導體異質結的材料生長、載流子輸運特性、光電集成器件與系統研究。

主要成就

科研成果

  • 學術論文
光電材料與器件代表性論文：
1. D. Wang, Haiding Sun*et al., Bidirectional photocurrent in p–n heterojunction nanowires. Nature Electronics, 4(9), 645-652 (2021) (ESI高被引論文)
2. S. Fang, Haiding Sun*et al., Light-induced bipolar photoresponse with amplified photocurrents in electrolyte-assisted bipolar GaN p-n junction, Advanced Materials, 2300911 (2023) (封面論文)
3. W. Chen, Haiding Sun*et al., Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication, Advanced Materials, 2307779 (2023) (封面論文)
4. H. Yu, Haiding Sun*et al., Highly Responsive Broadband (250~1000 nm) DUV-NIR Photodetector and Tunable Emitter Enabled by Ⅲ-Ⅴ Nanowire on Silicon for Integrated Photonics, 2023 IEEE International Electron Devices Meeting (IEDM), Paper # Session 20-4 (2023)
5. H. Yu, Haiding Sun*et al., Dual-Functional Triangular-Shape Micro-Size Light-Emitting and Detecting Diode for On-Chip Optical Communication in the Deep Ultraviolet Band, Laser & Photonics Reviews, 2300789 (2023)
6. H. Yu, Haiding Sun*et al., Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III–V Nanowire on Silicon Substrate for Integrated Photonics, Small, 2307458 (2023)
7. Y. Kang, Haiding Sun*et al., Achieving Record-High Photoelectrochemical Photoresponse Characteristics by Employing Co3O4 Nanoclusters as Hole Charging Layer for Underwater Optical Communication, ACS Nano, 17: 3901-3912 (2023)
8. Z. Li, Haiding Sun*, Solar Hydrogen, Advanced Energy Materials, 13(8), 2203019 (2023)
9. M. H. Memon, Haiding Sun*et al., Quantum Dots Integrated Deep-ultraviolet Micro-LED Array Towards Solar-Blind and Visible Light Dual-Band Optical Communication, IEEE Electron Device Letters, 44(3), 472-475 (2023)
10. D. Wang, Haiding Sun*et al., Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires, Light: Science & Applications, 11(1), 1-13(2022) (Cover Article封面文章 併入選 Editors’ Highlight)
11. H. Yu, Haiding Sun*et al., Deep Ultraviolet LEDs Incorporated with SiO2‐Based Microcavities Toward High Speed Ultraviolet Light Communication, Advanced Optical Materials 10 (23), 2201738(2022)
12. S. Fang, Haiding Sun* et al, Balancing the Photo-Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual-Polarity Photodetection，Advanced Functional Materials, 31(29), 2202524 (2022)
13. X. Liu, Haiding Sun* et al, Achieving Record High External Quantum Efficiency> 86.7% in Solar‐Blind Photoelectrochemical Photodetection，Advanced Functional Materials, 2201604 (2022) (Cover Article封面文章)
14. D. Wang, Haiding Sun* et al, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021) (ESI高被引論文)
15. D. Wang, Ran Long, Yujie Xiong, Boon S. Ooi, Zetian Mi, Jr-Hau He, and Haiding Sun*, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021). (ESI高被引論文)
16. Yu, H, Haiding Sun* et al, AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Optics Letters 46(13), 3271-3274 (2021) (2020-2021年度OL期刊高被引論文)
17. C. Huang, Haiding Sun*, Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System, Nano Energy, 77, 105149 (2020)
18. Y. Qin, Haiding Sun*, Shibing Long*, and Ming Liu, Metal−Semiconductor−Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism, ACS Photonics 7(3), 812−820, 2020 (Cover Article雜誌封面文章，ESI高被引論文前1%)
19. Haiding. Sun* et al., “Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate”, Advanced Functional Materials, 29 (48), 1905445, 2019 # 媒體報導：Featured in Compound Semiconductor，中國科技日報，中國科學報(2020年第7423期頭版
20. Haiding Sun* et al, Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation, ACS Photonics, 8, 3305, 2018
21. Haiding Sun* et al, HCl Flow-Induced Phase Change of α-, β- and ε-Ga2O3 Films Grown by MOCVD, Crystal Growth & Design, 18, 4, 2370-2376，2018 # 媒體報導：Featured in Compound Semiconductor, Science Newsline, Phys.org, Nanowerk
電力電子器件代表性論文：
22. H. Zhang, Haiding Sun*et al., Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers, Science China Information Science, 66 (8), 182405 (2023)
23. H. Zhang, Haiding Sun*et al., Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs, Applied Physics Letters 122 (17) (2023)
24. H. Zhang, Haiding Sun*et al., Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability, IEEE Tran. on Electron Device (2023) DOI:10.1109/TED.2023.3280863
25. Y. Sun, Haiding Sun*et al., Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs, IEEE Electron Device Letters, 43 (8), 1199-1203(2022)
26. L. Yang, Haiding Sun*et al., Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors， Applied Physics Letters， 120（9），091103(2022) (ESI高被引論文)
27. H. Zhang, Haiding Sun* et al, Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics, Reports on Progress in Physics, 84(4), 044401 (2021) (ESI高被引論文)
28. H. Zhang, Haiding Sun* et al, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles, Applied Physics Letters, 119(7), 072104 (2021);
29. H. Zhang, and Haiding Sun* et al, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W. Applied Physics Letters, 118(24), p.242105 (2021)
30. Z. Xing, Haiding Sun* et al, Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer, Journal of Physics D: Applied Physics 56 (2), 025105(2022)
31. B. Zeng, Haiding Sun* et al, DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures, Journal of Physics D: Applied Physics 55 (43), 434003(2022)
32. K. Song, Haiding Sun* et al, Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping Journal of Physics D: Applied Physics 53 (34), 345107 (2020)
  • 科研項目
孫海定教授團隊、熊宇傑教授團隊聯合武漢大學劉勝院士團隊，通過創新設計一種晶圓級可製造的新型矽基氮化鎵納米線光電極結構，實現了高達10.36%的半電池太陽能制氫效率，並在高電流密度下穩定產氫超過800小時，首次將光電極使用壽命從小於100小時的“小時級”推進至“月級”，成功突破傳統光電制氫裝置在效率和可靠性上的瓶頸，達到國際領先水平，為下一步規模化制氫套用打下基礎。相關研究成果日前發表於《自然·通訊》。

榮譽表彰

2023年度中國科學院優秀導師
2022年度校優秀博士論文指導老師,
2021安徽省優秀碩士論文指導老師
2021年度 iCAX Young Scientist Award（iCAN國際青年科學家獎）
2021年度國際先進材料協會頒發的 IAAM Young Scientist Medal

社會任職

擔任光電器件領域國際知名期刊如IEEE Photonics Technology Letters副主編和SPIE Journal of Nanophotonics副主編等，並受邀擔任Nano-Micro Letters、有色金屬材料學報和 Material Today Electronics 等期刊青年編委。

相關詞條

熱門詞條

聯絡我們