錢欽松，男，博士，東南大學電子科學與工程學院副教授，研究方向為環路控制與可靠性等。
基本介紹
- 中文名：錢欽松
- 學位/學歷：博士
- 職業：教師
- 專業方向：功率積體電路與系統的拓撲、環路控制與可靠性
- 任職院校：東南大學電子科學與工程學院
研究方向,個人經歷,學術成果,
研究方向
個人經歷
2012年留校工作，主要從事功率積體電路與系統的拓撲、環路控制與可靠性等方面的教學與研究工作。
學術成果
先後主持國家/江蘇省自然基金、國家/江蘇省重點研發項目等縱向項目6項，主持與企業橫向合作項目5項；參加國家“核高基”重大專項、國家“863”項目、國家自然科學基金、江蘇省項目以及其他科研合作項目10餘項；獲2014年“教育部技術發明一等獎”一項（第三完成人），獲2014年“江蘇省優秀博士論文”一篇；在IEEE Trans. on Electron Devices、IEEE Trans. on Power Electronics等在國內外核心刊物和國際重要學術會議上發表論SCI、EI收錄論文40餘篇（其中第一作者18篇）；獲中國發明專利授權71項（其中第一發明人專利授權29項），獲美國授權專利3項。
[1]Qian Q, Zhang T, Sun W, et al. Impact of stray inductances of the power loop on false trigger-on in the zero-voltage-switching full-bridge converter[J]. International Journal of Circuit Theory & Applications, 2017, 45(3):392-406.
[2]Qian Q, Sun W, Zhang T, et al. A Voltage-fed Single-stage PFC Full-bridge Converter with Asymmetric Phase-shifted Control for Battery Chargers[J]. Journal of Power Electronics, 2017, 17(1):31-40.
[3]Qian Q, Sun W, Yu J. Fast switch fault diagnosis for PWM DC–DC low power converters[J]. Ieej Transactions on Electrical & Electronic Engineering, 2017, 12(5).
[4]Qian Q, Yu J, Su C, et al. A LLC resonant converter with dual resonant frequency for high light load efficiency[J]. International Journal of Electronics, 2017.
[5]Qian Q, Yu J, Zhu J, et al. Isolated gate driver for SiC MOSFETs with constant negative off voltage[C]// Applied Power Electronics Conference and Exposition. IEEE, 2017:1990-1993.
[6]Qian Q, Liu S, Sun W, et al. A Robust W-Shape-Buffer LIGBT Device With Large Current Capability[J]. IEEE Transactions on Power Electronics, 2014, 29(9):4466-4469.
[7]Qian Q, Huang T, Liu S, et al. Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges[J]. IEEE Transactions on Device & Materials Reliability, 2014, 14(1):229-233.
[8]Qian Q, Sun W, Wei S, et al. The Investigation of Electrothermal Characteristics of High-Voltage Lateral IGBT for ESD Protection[J]. IEEE Transactions on Device & Materials Reliability, 2012, 12(1):146-151.
[9]Qian Q, Liu S, Wan W, et al. Reliability Concern on Extended E-SOA of SOI Power Devices With P-Sink Structures[J]. IEEE Transactions on Device & Materials Reliability, 2013, 13(1):161-166.
[10]Qian Q, Sun W, Liu S, et al. Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions[J]. 2012, 7(2):303-306.
[11]Qian Q, Sun W, Han D, et al. The optimization of deep trench isolation structure for high voltage devices on SOI substrate[J]. Solid-State Electronics, 2011, 63(1):154-157.
[12]Qian Q, Sun W, Zhu J, et al. Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions[J]. Microelectronics Reliability, 2010, 50(12):1935-1941.
[13]Qian Q, Sun W, Zhu J, et al. A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS[J]. IEEE Electron Device Letters, 2010, 31(12):1434-1436.
[14]Qian Q, Sun W, Liu S, et al. Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate[J]. IEEE Transactions on Electron Devices, 2011, 58(4):1158-1163.
[15]Qian Q, Sun W, Liu S, et al. Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions[C]// International Symposium on Power Semiconductor Devices and ICS. IEEE, 2012:303-306.
[16]Qian Q, Sun W, Li H, et al. Reliability investigations and improvements of the pLEDMOS for PDP data driver ICs[J]. Semiconductor Science Technology, 2011, 26(5):055001.
