祝傑傑，男，博士，西安電子科技大學微電子學院教授，博士生導師。
基本介紹
- 中文名：祝傑傑
- 國籍：中國
- 畢業院校：西安電子科技大學
- 學位/學歷：博士
- 專業方向：材料物理與化學、電子科學與技術
- 任職院校：西安電子科技大學
- 性別：男
- 職稱：教授
個人經歷,研究方向,學術成果,榮譽獎項,
個人經歷
2016.07至今西安電子科技大學，講師、副教授、教授
2011.08 - 2016.06 西安電子科技大學 材料物理與化學專業工學博士（碩博連讀）
2007.09 - 2011.07 西安電子科技大學 電子科學與技術專業工學學士（優秀畢業生）
現任職於西安電子科技大學微電子學院
研究方向
1、寬禁帶氮化物半導體器件：關鍵工藝、可靠性與失效分析、微系統
2、原子層沉積技術：介電薄膜沉積與表征、半導體表面與界面研究
3、功能薄膜與半導體器件集成
學術成果
學術論文
(1) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Jincheng Zhang, Yue Hao.
Chinese Physics B, 2013, 22(10): 107303.
(2) Quantitative characterization of interface traps in Al2O3/AlGaN/GaN MOS-HEMTs by dynamic capacitance dispersion technique
Xiaohua Ma, Jiejie Zhu, Xueyang Liao, Tong Yue, Weiwei Chen, and Yue Hao.
Applied Physics Letters, 2013, 103(3): 033510. [PDF]
(3) Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
Xiaohua Ma, Weiwei Chen, Bin Hou, Kai Zhang, Jiejie Zhu, Jincheng Zhang, Xuefeng Zheng, and Yue Hao.
Applied Physics Letters, 2014, 104(9): 093504.
(4) Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis
Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, and Yue Hao.
AIP Advances, 2014, 4(3): 037108.
(5) Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors
Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao.
Applied Physics Letters, 2014, 104(15): 153510. [PDF]
(6) Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Shenglei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao.
Microelectronics Reliability , 2014, 54(6-7):1293-1298.
(7) Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress
Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Yonghe Chen, Xuefeng Zheng, Jincheng Zhang, and Yue Hao.
Applied Physics Letters, 2014, 105(17): 173507.
(8) Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
Jiejie Zhu, Xiaohua Ma, Yong Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, and Yue Hao.
IEEE Transactions on Electron Devices , 2015, 62(2): 512-518. [PDF]
(9) Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors
Bin Hou, Xiaohua Ma, Weiwei Chen, Jiejie Zhu, Shenglei Zhao, Yonghe Chen, Yong Xie, Jincheng Zhang and Yue Hao.
Applied Physics Letters, 2015, 107(16): 163503.
(10) Investigation of trap states in Al2O3InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors
Peng Zhang, Shenglei Zhao, Junshuai Xue, Jiejie Zhu, Xiaohua Ma, Jincheng Zhang, Yue Hao.
Chinese Physics B, 2015, 24(12): 127306.
(11) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Qing Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Jiejie Zhu, Meng Zhang, Lixiang Chen, Yanrong Cao, Yue Hao.
Chinese Physics B, 2016, 25(6): 067305.
(12) Comparative study on interface and bulk charges in AlGaN/GaN MIS heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Yong Xie, and Yue Hao.
Japanese Journal of Applied Physics, 2016, 55(5S): 05FH01.
(13) Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
Jiejie Zhu, Xiaohua Ma, Bin Hou, Lixiang Chen, Qing Zhu, and Yue Hao.
Materials Research Express, 2017, 4(2):025902.
(14) Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-based MIS-HEMTs with Al2O3/AlN Gate Stack
Jiejie Zhu, Xiaohua Ma, Qing Zhu, Lixiang Chen, Bin Hou, Ling Yang, and Yue Hao.
IEEE Transactions on Electron Devices, 2017, 64(3): 840-847. [PDF]
(15) Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs
Ling Yang, Bin Hou, Minhan Mi, Jiejie Zhu, Meng Zhang, Qing Zhu, Yunlong He, Lixiang Chen, Xiaowei Zhou, Xiaohua Ma, Yue Hao
IEEE International Reliability Physics Symposium (IRPS) , 2017: WB-2.1-WB-2.4.
(16) 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125GHz
Bin Hou, Xiaohua Ma, Ling Yang, Jiejie Zhu, Qing Zhu, Lixiang Chen, Minhan Mi, Hengshuang Zhang, Meng Zhang, Peng Zhang, Xiaowei Zhou, and Yue Hao
Applied Physics Express, 2017, 10(7): 076501.
(17) Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure
Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao
IEEE Transactions on Electron Devices , 2017, 64(10): 4057-4064.
(18) Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures
Jiejie Zhu, Qing Zhu, Lixiang Chen, Mei Wu, Bin Hou, Ling Yang, Yue Hao, and Xiaohua Ma
Applied Physics Letters , 2017, 111(16): 163502. [PDF]
(19) Enhanced gm and fT with High Johnson's Figure-of-Merit in thin barrier AlGaN/GaN HEMTs by TiN-based source contact ledge
Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, et al.
IEEE Electron Devices Letters, 2017, 38(11): 1563-1566.
(20) 90nm Gate length Enhancement-mode AlGaN/GaN HEMT with plasma oxidation technology for high frequency application
Minhan Mi, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Xiaohua Ma, Yue Hao.
Applied Physics Letters, 2017, 111(17): 173502.
(21) Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region
Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Linan Yang, and Yue Hao.
IEEE Transactions on Electron Devices , 2017, 64(12): 4875-4881.
(22) Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance
Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao
IEEE Electron Devices Letters, 2018, 39(1): 79-82. [PDF]
(23) 0.9 A-mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique
Bin Hou, Xiaohua Ma, Jiejie Zhu, Ling Yang, Weiwei Chen, Minhan Mi, Qing Zhu, Lixiang Chen, Rong Zhang, Meng Zhang, Xiaowei Zhou, Yue Hao
IEEE Electron Devices Letters, 2018, 39(3): 397-400. [PDF]
(24) Threshold Voltage Shift and Interface/Border Trapping Mechanism in Al2O3/AlGaN/GaN MOSHEMTs
Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao
IEEE International Reliability Physics Symposium (IRPS), 2018: P-WB.1-1~1-4. [PDF]
(25) Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors
Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Fang Song, Qing Zhu, Meng Zhang, Ling Yang, and Yue Hao.
IEEE Transactions on Electron Devices, 2018, 65(8): 3149-3155. [PDF]
(26) Direct observation of gate leakage paths in AlGaN/GaN high electron mobility transistors by electron beam-induced current
Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Qing Zhu, Meng Zhang, Ling Yang, Jun Yin, Jiafen Wu, and Yue Hao.
IEEE Transactions on Device and Materials Reliability, 2018, 18(3): 359-363. [PDF]
(27) Comparative Study on Charge Trapping Induced Vth Shift for GaN-based MOS-HEMTs With and Without Thermal Annealing Treatment
Jiejie Zhu, Xiaohua Ma, Bin Hou, Mi Ma, Qing Zhu, Lixiang Chen, Ling Yang, Peng Zhang, Xiaowei Zhou, Yue Hao.
IEEE Transactions on Electron Devices, 2018, 65(12): 5343-5349. [PDF]
學術會議
