石媛媛，博士，現任中國科學技術大學微電子學院特任教授，博士生導師，國家海外高層次青年人才。一直致力於探索後摩爾時代積體電路邏輯、存儲與新型計算的技術路線，在相關領域發表學術論文70餘篇，包括Nature Electronics（2篇），IEDM（6篇），Advanced Materials，ACS Nano，Nano Letters，EDL等，獲國際發明專利5項，並撰寫了專著章節2章。主持多個國家自然科學基金項目，擔任IEEE EDS Nanotechnology 委員會成員和IEEE多個國際會議的技術委員會成員，包括IRPS, IPFA, EDTM等, 同時也擔任Nature, Nature Electronics, Nature Materials以及IEEE EDL等國際知名期刊的審稿人。
基本介紹
人物經歷,研究方向,主要成就,獲獎記錄,社會任職,
人物經歷
2022-，中國科學技術大學微電子學院，特任教授。
2020-2022，歐洲微電子研究中心（IMEC），高級研究員。
2019-2020，歐洲微電子研究中心（IMEC），博士後研究員。
2018-2019，以色列理工學院 （Technion），博士後研究員。
2016-2017，史丹福大學（Stanford University），博士交流生。
2018，巴塞隆納大學（University of Barcelona），博士。
2016年，獲得蘇州大學的碩士學位。
2013年，畢業於安徽師範大學化學與材料科學學院化學專業。
研究方向
1. 晶圓級二維半導體材料、器件與積體電路
2. 新型薄膜電晶體設計、微納製造與器件物理
3. 新型邏輯和存儲器件與電路
4. 低功耗類腦計算神經形態器件與系統
主要成就
- 論文/專利
Y. Shi, et al., Electronic synapses made of layered two-dimensional materials, Nature Electronics, 1, 458-465（2018）.
S. Chen, Y. Shi, et al., Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks, Nature Electronics, 3, 638-645（2020）.（Front cover）
Y. Shi*, et al., Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening, IEDM, pp. 37.1.1-37.1.4（2021）.
Y. Shi, et al., Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses, IEDM, pp. 5.4.1-5.4.4（2017）.
X. Wu, Y. Shi, et al., Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg, IEDM, pp. 7.4.1-7.4.4（2021）.
Q. Smets, Y. Shi, et al., Sources of variability in scaled MoS2 FETs, IEDM, pp. 3.1.1-3.1.4（2020）.
C.-H. Wang, Y. Shi, et al., 3D monolithic stacked 1T1R cells using monolayer MoS2 FET and h-BN RRAM fabricated at low（150 °C） temperature, IEDM, pp. 22.5.1-22.5.4（2018）.
F. Puglisi, Y. Shi, et al., 2D h-BN based RRAM devices, IEDM, pp. 34.8.1-34.8.4（2016）.
Y. Shi, et al., Template for growing a crystal of a two-dimensional material, US patent 18351402, 2024.
Y. Shi, et al., Deposition of highly crystalline 2D Materials, US patent 17677005, 2024.
Y. Shi*, et al., Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics, ACS Nano, 15, 9482-9494（2021）.
I. Kandybka, Y. Shi, et al., Chemical vapor deposition of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth on stepped sapphire surface, ACS Nano, 18, 3173-3186（2024）.
Y. Shi, et al., High solar-to-hydrogen conversion efficiency at pH 7 based on a PV-EC cell with an oligomeric molecular anode, ACS Applied Materials & Interface, 12, 55856-55864（2020）.
J. Serron, Y. Shi, et al., Conductivity enhancement in transition metal dichalcogenides: a complex water intercalation and desorption mechanism, ACS Applied Materials & Interfaces, 15, 26175-26189（2023）.
V. Spampinato, Y. Shi, et al., Correlated intrinsic electrical and chemical properties of epitaxial WS2 via combined C-AFM and ToF-SIMS characterization, Advanced Materials Interfaces, 10, 2202016（2023）.
M. A. Hoque, Y. Shi, et al., Water oxidation electrocatalysis using ruthenium coordination oligomers adsorbed on multiwalled carbon nanotubes, Nature Chemistry, 12, 1060-1066（2020）.
C. Wen, Y. Shi, et al., Advanced data encryption using 2D materials, Advanced Materials, 33, 2100185（2021）.
S. Fujii, Y. Shi, et al., Scaling the CBRAM switching layer diameter to 30 nm improves cycling endurance, IEEE Electron Device Letters, 99, 1-4（2017）.
K. Tang, Y. Shi, et al., Distinguishing oxygen vacancy electromigration and conductive filament formation in TiO2 resistance switching using liquid electrolyte contacts, Nano Letters, 17, 4390-4399（2017）.
X. Jing, Y. Shi, et al., Engineering field effect transistors with 2D semiconducting channels: status and prospects, Advanced Functional Materials, 30, 1901971（2020）.
T. Han, Y. Shi*, et al., Potassium hydroxide mixed with lithium hydroxide: an advanced electrolyte for oxygen evolution reaction, Solar RRL, 3, 1900195（2019）.
Y. Shi, et al., Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells, Journal of Materials Chemistry A, 5, 1996-2003（2017）.（Front cover）
L. Jiang, Y. Shi, et al., Dielectric breakdown in chemical vapor deposited hexagonal boron nitride, ACS Applied Materials & Interfaces, 9, 39758-39770（2017）.
Y. Shi, et al., CuO-functionalized silicon photoanodes for photoelectrochemical water splitting devices, ACS Applied Materials & Interfaces, 8, 686-702（2016）.
T. Han, Y. Shi, et al., Aging mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting, Journal of Materials Chemistry A, 4, 8053-8060（2016）.（Back cover）
Y. Shi, et al., In situ demonstration of the link between mechanical strength and resistive switching in conductive filament based non-volatile memories, Advanced Electronic Materials, 1, 1400058（2015）.
Y. Shi, et al., Ageing mechanisms and reliability of graphene-based electrodes, Nano Research, 7, 1820-1831（2014）.（Front cover）
獲獎記錄
歐盟瑪麗居里學者
福布斯歐洲“30位30歲以下精英”
IEEE電子器件學會優秀博士生獎
InfoMat青年科學家
國家優秀自費留學生獎學金
巴塞隆納大學傑出博士畢業生獎
Park Systems公司AFM award
社會任職
擔任IEEE EDS Nanotechnology 委員會成員和IEEE多個國際會議的技術委員會成員，包括IRPS, IPFA, EDTM等, 同時也擔任Nature, Nature Electronics, Nature Materials以及IEEE EDL等國際知名期刊的審稿人。
