十餘年寬禁帶半導體碳化矽（SiC）功率器件研究與產業化工作經驗，主持和參與國家科技重大02專項、國家重點研發計畫等項目10餘項，在J.Appl. Phys.，Microelectron. Reliab，Chin. Phys.B等雜誌上發表文章20餘篇，授權國內發明專利19項，美國授權專利3項。
主要研究方向為寬禁帶半導體器件研發、半導體缺陷科學與工程研究
基本介紹
代表論著：
近5年以第一作者身份發表論文12篇，通信作者身份2篇，代表論著如下：
[1] Yidan Tang*, Lan Ge, Hang Gu, Yun Bai, Yafei Luo, Chengzhan Li, Xinyu Liu. Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress. Microelectron. Reliab. 102 113451, 2019 .
[2] Yi-Dan Tang*, Xin-Yu Liu* , Zheng-Dong Zhou, Yun Bai, and Cheng-Zhan Li. Defects and electrical properties in Al-implanted 4H–SiC after activation annealing. Chin. Phys. B. Vol. 28, No. 10 106101, 2019.
[3] Yidan Tang*, Shengxu Dong, Yun Bai, Chengyue Yang, Chengzhan Li, Xinyu Liu. Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes. Materials Science Forum. Vol. 963, pp 562-566. 2019.
[4] Yidan Tang*, Xinyu Liu, Yun Bai, Shengxu Dong, Shaodong Xu. Study of Temperature-dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers. Materials Science Forum. Vol. 924, pp 589-592. 2018.
[5] Yidan Tang*, Xinyu Liu*, Yun Bai, Chengzhan Li, Chengyue Yang. High-Temperature Reliability Analysis of 1200 V/100 A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, Vol. 1004, pp 1004-1009. 2020.
以第一、二發明人或技術聯繫人，授權發明專利19項，其中美國3項，代表性專利如下：
[1] 湯益丹 申華軍 白雲 李博 周靜濤 劉煥明 楊成樾 劉新宇.，專利“多能離子注入實現階梯狀摻雜濃度分布的方法”，ZL201110412636.32. （已授權）.
[2] 湯益丹 申華軍 白雲 周靜濤 楊成樾 劉新宇 李誠瞻 劉國友，專利“碳化矽MOSFET器件及其製造方法”，專利號：ZL201510574417.3. （已授權）.
[3] Yidan TANG* Huajun SHEN Yun BAI et al. “SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME”, PCT/CN2015/089335. US Patent：US 10,680,067. 美國授權專利.
[4] Xinyu Liu Yidan TANG* Shengkai Wang et al.“MICROWAVE PLASMA GENERATING DEVICE FOR PLASMA OXIDATION OF SIC”, US Patent ：US 10, 734, 199. 美國授權專利.
[5] Xinyu Liu Yidan TANG* Shengkai Wang et al. “METHOD FOR MANUFACTURING GROOVED MOSFET DEVICE BASED ON TWO-STEP MICROWAVE PLASMA OXIDATION”, US Patent: US 10,763,105. 美國授權專利.
所獲榮譽：2019年北京市科學技術發明二等獎
