基本介紹
- 中文名：張有潤
- 職稱：副教授
- 任職單位：電子科技大學
- 性別：男
研究方向,學術成果,
研究方向
1. 高壓大電流寬禁帶半導體碳化矽(SiC)功率器件理論、模型和新結構研究，包括：SiC BJT、SiC VDMOS、SiC功率整流器等。
2. 矽基光電積體電路。包括新型器件結構和工藝集成方法的研究，以及光電探測、檢測、信號處理積體電路的研製。
研究條件
電子科技大學電子薄膜與集成器件國家重點實驗室已經建成一條具有先進水平的微細加工平台工藝生產線，具備半導體器件研製能力，主要設備包括：刻蝕、光刻、氧化、退火、擴散、介質膜生長等以及SEM、TEM、Auger等測試分析設備。所在課題組擁有5台SUN Blade 2000工作站、20餘台Dell Precision T1600工作站；軟體條件：電子科技大學IC設計中心擁有Cadence、Synopsys和Mentor Graphics公司的電路仿真軟體，可勝任項目所需的仿真和計算工作；測試條件：擁有示波器、函式發生器、探針台等各種測試所需設備；本課題組與中芯國際SMIC、華虹NEC和上華CSMC等代工廠有著長期友好的協作關係，並曾多次在上述代工廠流片。
學術成果
Yourun Zhang,Bo Zhang, Xilin liu,Xiaochuan Deng.Novel 4H-SiC BJTs with Epitaxial Junction Termination Composite Structure, Electronics Letters,2012,48(2):122-123
Yourun Zhang, Bo Zhang, Zhaoji Li,et al.Novel 4H-SiC BJT utilizing floating buried layer in base for high current gain high current gain stability and high breakdown voltage.The International Journal for Computation and Mathematics in Electrical and Electronic Engineering,2010,29(2):515-521
Zhang You-Run, Zhang Bo,Li Zhao-Ji, et al.Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor.Chinese Physics. B, 2010, 19(6): 067102-1-067102-6
Zhang You-Run, Zhang Bo,Li Ze-Hong,et al.Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device,Chinese Physics B,2009,18(2):763-767
Zhang You-Run, Zhang Bo,Li Zhao-Ji,et al.A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base,Chinese Physics B,2009,18(9):3995-3999
Yourun Zhang,Bo Zhang,Zehong Li,Changjin Lai; Zhaoji Li. Analysis of thermal characteristics of current gain for BJT-BSIT compound device. International Conference on Communications, Circuits and Systems (ICCCAS 2008), pp.1278-1281
Yourun Zhang,Bo Zhang,Zhaoji Li, Xiaochuan Deng,Xilin liu .The effect of the surface recombination on current gain for 4H-SiC BJT. IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), pp. 491-494
Yourun Zhang,Bo Zhang,Zhaoji Li, Xilin liu,Xiaochuan Deng.Novel structure of 4H-SiC bipolar junction transistor.International Conference on Communications, Circuits and Systems,(ICCCAS 2009),pp.641-644
Deng Xiao-Chuan, Zhang Bo,Zhang You-Run,Wang Yi, and Li Zhao-Ji .Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer. Chinese Physics. B,2011,20(1): 017304-1-017304-5
