周琦：男，電子科技大學副教授。博士。2012年畢業於香港科技大學獲博士學位，同年加入電子科技大學微電子與固體電子學院。
專注於第三代寬禁帶新型半導體材料、器件及其集成技術的研究，尤其在氮化鎵（GaN）功率器件新結構、模型/器件物理、先進制備工藝與GaN功率集成技術領域具有較好的研究基礎。開發出一款矽基GaN（GaN-on-Si）柵控橫向功率整流器新結構，器件性能達到國際報導的同類器件最高水平。開發出一種高效、低損傷原子層刻蝕技術，利用該技術製備的增強型GaN高電子遷移率電晶體（HEMT）器件性能達到國際領先水平。研究成果發表於行業頂級期刊《IEEE Electron Device Letters》、《IEEE Trans. on Electron Devices》、《IEEE Microwave and Wireless Components Letter》及國際頂級會議IEDM、ISPSD。目前已在IEEE EDL、IEEE TED、IEEE MWCL等本領域頂級期刊和IEDM、ISPSD等國際頂級會議共發表論文43篇。研究成果被功率半導體世界最著名學者J. B. Baliga (IEEE fellow, 2010年美國國家科學技術獎獲得者)發表於Semicond. Sci. and Tech.的 Invited Review Paper及中國科學院院士郝躍教授的綜述性文章作為高壓 InAlN/GaN HEMT的代表性工作所引用。參加國際重要學術會議15次，邀請報告1次，口頭報告4次。申請中國發明專利5項。被IEEE-TED和IEEE-EDL評為2013及2014年度金牌審稿人(Golden Reviewers)。
基本介紹
- 中文名：周琦
- 國籍：中國
- 民族：漢
- 職業：教授
- 畢業院校：香港科技大學
- 學位/學歷：博士
- 專業方向：新型半導體材料、器件及其集成技術
- 職務：電子科技大學副教授
- 主要成就：開發出一款矽基GaN（GaN-on-Si）柵控橫向功率整流器新結構，器件性能達到國際報導的同類器件最高水平。
周琦，男，電子科技大學副教授。
教育背景
2008.08－2012.08 香港科技大學，電子與計算機工程專業，博士學位
2004.08－2007.04 西安電子科技大學，電子工程專業，碩士學位2000.09－2004.06 西安電子科技大學，電磁場與微波專業，學士學位
工作經歷
2015.07-至今 電子科技大學， 副教授
2012.08-2015.06 電子科技大學， 講師
2007.04-2008.07 摩比天線技術（深圳）有限公司，主任工程師/項目經理
代表性學術成果
★ 在被譽為“器件奧林匹克”的頂尖會議IEDM上發表論文2篇
★ 2013年在功率半導體頂級會議ISPSD實現GaN領域中國大陸發表論文0的突破
★ 2015年在功率半導體頂級會議ISPSD做大會口頭報告（迄今在GaN領域是中國大陸學者唯一口頭報告）
★ 2013-2016連續4年在ISPSD發表論文，投稿命中率100%。目前是在頂級會議ISPSD以第一作者及通訊作者發表
GaN相關研究論文最多的中國學者（第一作者3篇，通訊作者1篇）
★ 三項研究成果在頂級期刊 IEEE EDL所發表論文被國際知名半導體行業雜誌《Semiconductor Today》和
《Compound Semiconductor》進行整版面專題報導
科研項目
國家自然科學基金青年項目-"新型InAlN/GaN異質結功率器件新結構與模型"（NSFC61306102） 主持
國家自然科學基金面上項目-"Si基GaN增強型功率開關器件閾值電壓調控機理與新結構"（NSFC61674024） 主持
國防重點實驗室開放基金-"InAlN/GaN MISFET界面電荷行為和相關技術研究" 主持 （已結題）
中央高校基本科研項目-"Schottky-2DEG隧穿InAlN/GaN功率器件新結構與模型" 主持 （已結題）
國家科技重大專項-"矽基GaN功能集成與矽工藝融合技術研究" 主研
學術兼職
2013-至今 IEEE 會員
2012-至今 國際權威期刊 IEEE Electron Dev. Lett., IEEE Trans. Electron Dev., Applied Physics Lett.特邀審稿人
2013-至今 SCI期刊 Microelectronics Reliability, Solid-State Electronics, Chinese Physics Lett., Chinese Physics-B 審稿人
期刊論文：
★ Q. Zhou*, Z. H. Wang, X. Y. Zhou, A. B. Zhang, Y. Y. Shi, L. Liu, Y. G. Wang, Y. L. Fang, Y. J. Lv, Z. H. Feng, and B. Zhang, "Physics of Dynamic Threshold Voltage and Steep Subthreshold Swing in Al2O3/InAlN/GaN MOSHEMTs," Semicond. Sci. Technol., vol. 31, pp. 035005, Jan. 2016.
★Qi Zhou*, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang*,"7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering,"IEEE Electron Device Lettersvol. 37, no.2, pp.165-168, Feb. 2016.
被半導體行業國際知名雜誌 《SemiconductorToday》作為GaN功率器件重要研究進展進行專題報導。
★Yuanyuan Shi,Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, Wei Huang and Bo Zhang,"Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs," Physica Solidi Status-C 1–4 (2016) / DOI 10.1002/pssc.201510189
★ Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao,Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia ." Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs"[J]. Journal of Vacuum Science & Technology B, 2016, 34(4): 041202.
★Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Qi Zhou, Zhaoji Li and Bo Zhang, "High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing Switch Applications,"IEEE Electron Device Lettersvol. 37, no.2, pp.205-208, Feb. 2016.
★Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, and Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs FabricatedWith LPCVD-SiNx Passivation andHigh- Temperature Gate Recess,"IEEE Trans. on Electron Devicesvol. 63, no.2, pp.614-619, Feb. 2016.
★Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu, Qi Zhou, Wanjun Chen and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing," Applied Physics Lett.,vol. 107, no. 26, pp.262109, 2015
★Qi Zhou*, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection,"IETElectronics Lett.,vol. 51, no. 23, pp: 1889–1891,Nov. 2015
★Qi Zhou*, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode,"IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015.
被國際半導體行業著名雜誌《SemiconductorToday》作為GaN功率半導體技術重要研究進展進行專題報導。
★Qi Zhou*, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High- Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit,"
IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015.
★Qi Zhou*, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,"Solid-State Electronics,vol. 91, pp: 19-23, 2014.
★Qi Zhou*,, Wanjun Chen, Shenghou Liu,Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement,"IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013.
★Qi Zhou*,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,"IETElectronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013.
★Qi Zhou*,, Wanjun Chen, Shenghou Liu,Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications," Electrochemical Society Transactions, vol. 54, no. 4, pp: 351-363, Oct. 2013.
★Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance,"Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.
★Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT with Enhanced Breakdown Voltage,"IEEE Electron Device Lett., vol. 33, no. 1, pp: 19-21, Jan. 2012.
★Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou,Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jurgen Schubert,and Kevin J. Chen, "AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric,"IEEE Electron Device Lett., vol. 33, no. 7, pp: 979-981, Jul. 2012.
★Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN power tunnel-junction FETs, "Phys. Status Solidi-C, vol. 9, no. 3-4, pp: 871-874, Mar. 2012.
★ Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor"IEEE Electron Device Lett., vol. 32, no. 9, pp: 1221-1223, Sep. 2011.
★Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode,"IEEE Microwave and Wireless Components Lett., vol. 20, no. 5, pp: 277-279, May. 2010.
★King-Yuen Wong, Wanjun Chen,Qi Zhou, and Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications,"IEEE Trans. on Electron Devices, vol. 56, no. 12, pp: 2888-2894, Dec. 2009.
★S. J. Li,Qi Zhou, Y. J. Xie, and Z. Y. Lei, "THEORETICAL AND EXPERIMENTAL INVESTIGATION ON PCB HELIX ANTENNA,"J. of Electromagnetic Waves and Applications,vol. 21, no. 7, pp. 877-887, Jul. 2007.
★Qi Zhou*, Y. J. Xie, and Z. Chen, "Prediction of Equipment-to-Equipment Coupling Through Antennas Mounted on and Aircraft,"J. of Electromagnetic Waves and Applications,vol. 21, no. 5, pp: 653-663, 2007.
國際頂級學術會議 （IEDM、ISPSD）：
★Qi Zhou*,Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Yang Jin, Wanjun Chen, andBo Zhang, "Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD),Prague, Czech Republic, June 12–16, 2016.
★Wanjun Chen*, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu,Qi Zhou, Zhaoji Li, and Bo Zhang, "Experimentally Demonstration a Cathode Short MOS-Controlled Thyristor (CS-MCT) for Single or
Repetitive Pulse Applications,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD),Prague, Czech
Republic, June 12–16, 2016.
★Qi Zhou*, Yang Jin, Xu Bao, Jingyu Mou, Bowen Chen, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, and Bo Zhang, "Over 1.1 kV Breakdown Voltage, Low Turn-on Voltage GaN-on-Si Power Diode with MIS-Gated Hybrid Anode,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hong Kong, China, May, 2015. GaN領域迄今中國大陸在該頂級會議唯一大會口頭報告
★Qi Zhou*, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Breakdown Voltage InAlN/GaN HEMTs Achieved by Schottky-Source Technology,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Kanazawa, Japan., pp. 195-198, May. 2013.
GaN領域中國大陸在該頂級會議第一篇論文
★Jinhan Zhang, Sen Huang,Qi Zhou*, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, and Bo Zhang, "ON-State Breakdown Mechanism of GaN Power HEMTs,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hawaii, US., pp. 362-365, Jun. 2014.
★Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "A Novel Normally-off GaN Power Tunnel Junction FET,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), San Diego, US., pp. 276- 279, May. 2011.
★Qi Zhou*, Sen Huang, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 777-780, Dec. 2011.
★Kevin J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang,Qi Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 467-470, Dec. 2011.（Invited paper）
其他國際學術會議：
★Ruopu Zhu,Qi Zhou†, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, and Bo Zhang,"High Performance Normally-off Al2O3/GaN MOSFETs with RecordHigh Threshold Voltage by Interface Charge Engineering,"IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, Oct. 2016.
★Yi Yang,Qi Zhou†, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang,"0.3 VT/1.1 kV AlGaN/GaN Lateral Power Diode with MIS-GatedHybrid Anode on Silicon Substrate,"IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016
★Yuanyuan Shi,Qi Zhou*, Yang Jin, Bowen Chen, Wanjun Chen, and Bo Zhang, "Impact of interface states
on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,"11thIntl. Conference on
NitrideSemiconductors (ICNS), Aug. 2015
★Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Yijun Shi,Qi Zhou, Wanjun Chen, and Bo Zhang, "Microstructure and physical mechanism of Au-free ohmic contacts to AlGaN/GaNheterostructures annealed at 600 C,"11thIntl. Conference on Nitride Semiconductors (ICNS), Aug. 2015
★Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu,Qi Zhou, Wanjun Chen, Bo Zhang, "Study of interface traps and fixed charges between GaN(cap)/AlGaN/AlN/GaN heterostructure and SiNx gate dielectric grown by Low Pressure Chemical Vapor Deposition,"11thIntl. Conference on Nitride Semiconductors (ICNS), Aug. 2015
★ Qi Zhou*, Ling Wang, Xu Bao, Jinyu Mou, Yuanyuan Shi, Zhaoyang Liu, Wanjun Chen, and Bo Zhang, "High Performance AlGaN/GaN Power Diode with Edge-Terminated Hybrid Anode,"IEEE 12th Int. Conf. on Solid- State and Integrated Circuit Technology (ICSICT), Guilin, China, Oct. 2014.
★Qi Zhou*, W. J. Chen, S. H. Liu, B. Zhang, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Heterojunction: Prospects for Robust GaN Power Devices,"224th Electronchemical Society Meeting, San Francisco, US., Oct. 2013. (Invited paper)
★Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction FETs,"9th Int. Conf. on Nitride Semiconductors (ICNS), Glasgow, Scotland, Jul. 2011.
★Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage,"Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 624-625, Sep. 2011.
★Qi Zhou*, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Observation of Trap- Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT,"Device Research Conference (DRC), Santa Barbara, US., pp. 71-72, Jun. 2011.
★Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "High-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN-Based Lateral Field-Effect Diode,"IEEE Electrical Design of AdvancedPackaging & Systems Symposium (EDAPS), HongKong, China, pp. 1-4, 2009.
★Qi Zhou*, King Yue Wong, Wanjun Chen, and Kevin J. Chen, "Microwave Detector Using AlGaN/GaN HEMT-Compatible Lateral-Field Effect Rectifier (L-FER),"Topical Workshop on HeterostructureMicroelectronics (TWHM), Nagano, Japan, Aug. 2009.
