《Growth and characterization of Ga2O3-based wide bandgap semi》是2020年華中科技大學出版社出版的圖書。
基本介紹
- 外文名：Growth and characterization of Ga2O3-based wide bandgap semi
- 作者：張法碧
- 出版時間：2020年5月
- 出版社：華中科技大學出版社
- ISBN：9787568059039
- 類別：工業技術
- 開本：16 開
- 裝幀：平裝-膠訂
內容簡介,圖書目錄,作者簡介,
內容簡介
本書主要研究了新一帶超寬禁帶半導體材料-氧化鎵的基本性質；全書從氧化鎵的基本性質與國內外研究現狀入手，詳細論述了氧化鎵生長質量的影響因素；論述了利用摻雜來氧化鎵電導率調製的方法與機制；論述了分別利用氧化銦和氧化鋁和氧化鎵來形成合金從而調節其禁頻寬度的方法與機制。
圖書目錄
1 Introduction
1.1 Background
1.2 Review of studies on Ga2O3, (Ga1-xInx)2O3 and (AlxGa1-x)2O3 films
1.2.1 Ga2O3
1.2.2 Si doped Ga2O3
1.2.3 (Ga1-xInx)2O3
1.2.4 (AlxGa1-x)2O3
1.3 Purpose and Outline
2 Film growth and characterization methods
2.1 Film deposition techniques
2.2 Pulsed laser deposition
2.2.1 Basic of pulsed laser deposition
2.2.2 The deposition process
2.2.3 The pulsed laser deposition equipment used in this research
2.2.4 The film growth procedures
2.3 Characterization methods
3 Growth and characterization of Ga2O3 films
3.1 Introduction
3.2 Oxygen pressure influence
3.2.1 Growth rate
3.2.2 Crystal structure
3.2.3 Transmittance and surface morphology
3.2.4 Discussions
3.3 Substrate temperature influence
3.3.1 Crystal structure
3.3.2 Optical properties
3.3.3 Surface morphology
3.3.4 Valence band structure
3.4 Growth time influence
3.5 Annealing effects
3.5.1 Annealing effect on films deposited at RT
3.5.2 Annealing effect on films deposited at 500 oC
3.5.3 Annealing effect on CL spectra
3.6 Conclusions
4 Effect of Si doping on properties of Ga2O3 films
4.1 Introductions
4.2 Si content influence
4.3 Substrate temperature influence
4.4 Oxygen pressure influence
4.5 Conclusions
5 Growth and characterization of (Ga1-xInx)2O3 films
5.1 Introduction
5.2 Bandgap engineering of (Ga1-xInx)2O3 films
5.2.1 Growth parameters
5.2.2 Optical properties
5.2.3 Structure and surface morphologies
5.3 Thermal annealing impact on crystal quality of (GaIn)2O3 alloys
5.4 Toward the understanding of annealing effects on (GaIn)2O3 films
5.4.1 Influence of annealing gas ambient
5.4.2 Influence of annealing temperature
5.5 Annealing effect on films with different indium content
5.6 Conclusions
6 Growth and characterization of (AlGa)2O3 films
6.1 Introduction
6.2 The Al content in the film
6.3 Structure of the (AlGa)2O3 films
6.4 Transmittance and bandgap of the (AlGa)2O3 films
6.5 Conclusions
作者簡介
張法碧，男，教授，碩士生導師。廣西高校引進海外高層次人才“百人計畫”，“廣西高校千名骨幹教師培訓計畫”人選，廣西“創新創業青年人才培養示範”，“廣西E層次人才”；研究領域：微電子與固體電子學。研究方向：紫外探測材料器件、寬禁帶半導體材料與器件、二維材料與器件、透明氧化物薄膜與器件、功率器件。主持項目一項，其他項目十餘項。在Applied physics letters, Thin solid film, Journal of alloy and compounds等國際著名期刊已發表論文50餘篇。成果獲得了美國空軍研究實驗室、美國華盛頓大學、義大利卡利亞里大學等機構的一致好評與引用。曾經獲得過國家多媒體課件大賽理工組二等獎，廣西教育技術套用大賽特等獎，廣西教學成果二等獎。
